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SiC MOSFET - SCT2120AF

650V 29A N-channel SiC power MOSFET

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCT2120AFC Active TO-220AB 1000 50 Tube Yes
 
Specifications:
Common Standard -
Drain-source Voltage[V] 650
Drain-source On-state Resistance(Typ.)[mΩ] 120
Drain Current[A] 29.0
Total Power Dissipation[W] 165
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • ・ Low on-resistance
    ・ Fast switching speed
    ・ Fast reverse recovery
    ・ Easy to parallel
    ・ Simple to drive
    ・ Pb-free lead plating ; RoHS compliant
 
 
Pin Configuration:
Pin Configration
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET