Downloading...
 
product-image
 

Silicon carbide Schottky Barrier Diode for Automotive - SCS210KGHR

Switching loss reduced, enabling high-speed switching . (2-pin package)

Additional Information  
FAQ 
Buy  
Sample  
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCS210KGHRC Active TO-220AC 1000 50 Tube Yes
 
Specifications:
Grade Automotive
Common Standard AEC-Q101
Reverse Voltage[V] 1200
Continuous Forward Current[A] 10
Total Power Dissipation[W] 150
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
more
Features:
    • AEC-Q101 qualified
    • Shorter recovery time
    • High-speed switching possible
    • Reduced temperature dependence
more
 
 
RELATED PRODUCTS
Other New/Updated Products Relating to SiC Power Devices
PART NUMBER Product Name Package Datasheet Distribution Inventory
SCS230KE2AHR Silicon carbide Schottky Barrier Diode for Automotive TO-247   inquiry
SCS240KE2AHR Silicon carbide Schottky Barrier Diode for Automotive TO-247   inquiry
SCS206AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   Buy Sample
SCS208AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   Buy Sample
SCS210AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   Buy Sample
SCS212AJHR Silicon carbide Schottky Barrier Diode for Automotive TO-263AB (LPTL)   Buy Sample
New Products:
New Product List 
 
 
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Spice Model

Thermal Model

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes