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Silicon carbide Schottky Barrier Diode for Automotive - SCS210KGHR

Switching loss reduced, enabling high-speed switching . (2-pin package)

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SCS210KGHRC Active TO-220AC 1000 50 Tube Yes
 
Specifications:
Grade Automotive
Common Standard AEC-Q101
Reverse Voltage[V] 1200
Continuous Forward Current[A] 10
Total Power Dissipation[W] 150
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
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Features:
    • AEC-Q101 qualified
    • Shorter recovery time
    • High-speed switching possible
    • Reduced temperature dependence
more
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Spice Model

Thermal Model

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes