Downloading...
SiC SBD - SCS210AGSwitching loss reduced, enabling high-speed switching . (2-pin package)
|
|||
* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
Specifications:
Grade | Standard |
Common Standard | - |
Reverse Voltage[V] | 650 |
Continuous Forward Current[A] | 10 |
Total Power Dissipation[W] | 78 |
Junction Temperature(Max.)[°C] | 175 |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 175 |
Applications:
Pin Configuration:
![]() |
RELATED PRODUCTS
Other New/Updated Products Relating to SiC Power Devices
PART NUMBER | Product Name | Package | Datasheet | Distribution Inventory |
---|---|---|---|---|
SCS230KE2AHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-247 | inquiry | |
SCS240KE2AHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-247 | inquiry | |
SCS206AJHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-263AB (LPTL) | Buy Sample | |
SCS208AJHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-263AB (LPTL) | Buy Sample | |
SCS210AJHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-263AB (LPTL) | Buy Sample | |
SCS212AJHR | Silicon carbide Schottky Barrier Diode for Automotive | TO-263AB (LPTL) | Buy Sample |
New Products:
Technical Data
SPICE Simulation Evaluation Circuit
Circuit data for device evaluation
For SiC Power Devices and Modules
SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...
NE Handbook Series
For Power Device
Product Catalog File
SiC Power Device Catelog
Part Explanation
For SiC Schottky Barrier Diodes