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SiC Schottky Barrier Diode Bare Die - S6306

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
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Sample 
* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
S6306 Active Yes
 
Specifications:
Reverse Voltage[V] 1200
Continuous Forward Current[A] 15
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
 
 
 
 
Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC SBD Bare Die