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SiC Schottky Barrier Diode Bare Die - S6301

S6201 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. The total capacitive charge (Qc) is small, reducing switching loss, enabling high-speed switching operation.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
S6301 Active Yes
 
Specifications:
Reverse Voltage[V] 1200
Continuous Forward Current[A] 5
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • · Shorter recovery time
    · Reduced temperature dependence
    · High-speed switching possible
 
 
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Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC SBD Bare Die