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N-channel Silicon Carbide power MOSFETbare die - S4105 (New)

S4105 is an SiC (Silicon Carbide) power MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
S4105 Active Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 160
Drain Current[A] 17.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low on-resistance
    • Fast switching speed
    • Fast reverse recovery
    • Easy to parallel
    • Simple to drive
 
 
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ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die