4.5V Drive Nch MOSFET - RS1G120MN
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
|* This product is a STANDARD grade product and not recommend for on-vehicle devices.|
|Series||Generation 3rd Nch-MOSFET|
|Number of terminal||8|
|Drain-Source Voltage VDSS[V]||40|
|Drain Current ID[A]||40.0|
|RDS(on)[Ω] VGS=4.5V (Typ.)||0.0156|
|RDS(on)[Ω] VGS=10V (Typ.)||0.0116|
|RDS(on)[Ω] VGS=Drive (Typ.)||0.0156|
|Total gate charge Qg[nC]||10.1|
|Power Dissipation (PD)[W]||3.0|
|Mounting Style||Surface mount|
|Storage Temperature (Min.)[°C]||-55|
|Storage Temperature (Max.)[°C]||150|
- ・ Low on-resistance.
・ Fast switching speed.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant
・ 100% Rg and UIS Tested