RQ3E180BN
Nch 30V 39A Middle Power MOSFET
RQ3E180BN
RQ3E180BN
Nch 30V 39A Middle Power MOSFET
RQ3E180BN is low on-resistance and high power package MOSFET for switching application.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | RQ3E180BNTB1
Status |
Recommended
Package |
HSMT8
Unit Quantity | 3000
Minimum Package Quantity | 3000
Packing Type | Taping
RoHS |
Yes
Specifications:
Package Code
HSMT8 (3.3x3.3)
Applications
Switching, Motor
Number of terminal
8
Polarity
Nch
Drain-Source Voltage VDSS[V]
30
Drain Current ID[A]
39
RDS(on)[Ω] VGS=4.5V(Typ.)
0.0037
RDS(on)[Ω] VGS=10V(Typ.)
0.0028
RDS(on)[Ω] VGS=Drive (Typ.)
0.0037
Total gate charge Qg[nC]
37
Power Dissipation (PD)[W]
20
Drive Voltage[V]
4.5
Mounting Style
Surface mount
Bare Die Part Number
Available: K4003
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
3.3x3.3 (t=0.75)
Features:
- Low on - resistance.
- High Power Package (HSMT8).
- Pb-free lead plating ; RoHS compliant.
- Halogen Free.
