Nch 30V 12A Middle Power MOSFET - RQ3E120BN

High power package RQ3E120BN is middle power MOSFET for switching application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RQ3E120BNTB Active HSMT8 3000 3000 Taping inquiry Yes
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 12.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0086
RDS(on)[Ω] VGS=10V (Typ.) 0.0066
RDS(on)[Ω] VGS=Drive (Typ.) 0.0086
Total gate charge Qg[nC] 14.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
Pin Configuration:
Pin Configration
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors