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Nch 30V 10A Middle Power MOSFET - RQ3E100BN

RQ3E100BN is high power package(HSMT8) MOSFET for switching.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RQ3E100BNTB Active HSMT8 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code HSMT8(3.3x3.3)
Package Size[mm] 3.3x3.3(t=0.8)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 13.5
RDS(on)[Ω] VGS=4.5V (Typ.) 0.011
RDS(on)[Ω] VGS=10V (Typ.) 0.0077
RDS(on)[Ω] VGS=Drive (Typ.) 0.011
Total gate charge Qg[nC] 10.5
Power Dissipation (PD)[W] 15.0
Drive Voltage[V] 4.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
    • Low on - resistance.
    • High Power Package (HSMT8).
    • Pb-free lead plating; RoHS compliant.
    • Halogen Free
 
 
Pin Configuration:
Pin Configration
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors