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820nm High Power Laser Diode - RLD82PZJ1 (Under Development)

A long-run product with market-proved high reliability. Matching to various needs.

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RoHS
RLD82PZJ1 Under Development φ5.6mm 500 500 Tray Yes
 
Specifications:
Application Motion Sensor for Gesture Control, 3D Depth Sensor
Wave-length λ(Min.)[nm] 812
Wave-length λ(Typ.)[nm] 822
Wave-length λ(Max.)[nm] 832
Optical Output Po(Max.)[mW] CW 220
LD Reverse Voltage(Max.)[V] 2
PinPD Reverse Voltage(Max.)[V] 20
Threshold Current Ith(Typ.)[mA] 50
Threshold Current Ith(Max.)[mA] 70
Operating Current Iop(Typ.)[mA] 255
Operating Current Iop(Max.)[mA] 400
Operating Voltage Vop(Typ.)[V] 2.4
Operating Voltage Vop(Max.)[V] 3.3
Output Efficiency η(Min.)[W/A] 0.7
Output Efficiency η(Typ.)[W/A] 0.95
Output Efficiency η(Max.)[W/A] 1.5
Monitor Current Im(Min.)[mA] 0.1
Monitor Current Im(Typ.)[mA] 0.3
Monitor Current Im(Max.)[mA] 1.5
Beam Divergence θ//(Min.)[deg] 7
Beam Divergence θ//(Typ.)[deg] 9.5
Beam Divergence θ//(Max.)[deg] 12
Beam Divergence θ⊥(Min.)[deg] 13
Beam Divergence θ⊥(Typ.)[deg] 17
Beam Divergence θ⊥(Max.)[deg] 21
Beam Tolerance ⊿θ//(Min.)[deg] -3
Beam Tolerance ⊿θ//(Typ.)[deg] 0
Beam Tolerance ⊿θ//(Max.)[deg] 3
Beam Tolerance ⊿θ⊥(Min.)[deg] -3
Beam Tolerance ⊿θ⊥(Typ.)[deg] 0
Beam Tolerance ⊿θ⊥(Max.)[deg] 3
Emission Point Accuracy ⊿XYZ(Min.)[µm] -80
Emission Point Accuracy ⊿XYZ(Typ.)[µm] 0
Emission Point Accuracy ⊿XYZ(Max.)[µm] 80
Emission Point Distance(Typ.)[µm] 0
Polarity P(LD Cathode / PD Anode)
Operating Temperature (Min.)[°C] -10
Operating Temperature (Max.)[°C] 60
Features:
  • ・ 220mW (max.), CW
    ・ High efficiency and excellent temperature characteristics
 
 
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ROHM Semiconductor reserves the right to change the specifications at any time.
 
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