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650V 50A Field Stop Trench IGBT - RGTH00TK65D (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RGTH00TK65DGC11 Active TO-3PFM 450 450 Tube Yes
 
Specifications:
VCES [V] 650
IC(100°C)[A] 21
VCE(sat) (Typ.) [V] 1.6
Built-in Diode FRD
Pd [W] 72
VGE(th) (Min.)[V] 4.5
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low Collector-Emitter Saturation Voltage
    • High Speed Switching
    • Low Switching Loss & Soft Switching
    • Built in Very Fast & Soft Recovery FRD (RFN-Series)
    • Pb-free Lead Plating; RoHS Compliant
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation