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650V 25A Field Stop Trench IGBT - RGT50NS65D(LPDS) (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RGT50NS65DGTL Active LPDS 1000 1000 Taping Yes
 
Specifications:
VCES [V] 650
IC(100°C)[A] 25
VCE(sat) (Typ.) [V] 1.65
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 194
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low Collector-Emitter Saturation Voltage
    • Low Switching Loss
    • Short Circuit Withstand Time 5µs
    • Built in Very Fast & Soft Recovery FRD (RFN-Series)
    • Pb-free Lead Plating; RoHS Compliant
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
Operation Notes

For Surface Mount Type

Operation Notes

For Lead Type

Condition Of Soldering

For Surface Mount Type