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650V 8A Field Stop Trench IGBT - RGT16BM65D (New)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RGT16BM65DTL Active TO-252 2500 2500 Taping Yes
 
Specifications:
VCES [V] 650
IC(100°C)[A] 8
VCE(sat) (Typ.) [V] 1.65
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 94
VGE(th) (Min.)[V] 5.0
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low Collector-Emitter Saturation Voltage
    • Low Switching Loss
    • Short Circuit Withstand Time 5µs
    • Built in Very Fast & Soft Recovery FRD (RFN-Series)
    • Pb-free Lead Plating; RoHS Compliant
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation