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Nch 30V 10A Middle Power MOSFET - RF4E100AJ (New)

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RF4E100AJTCR Active HUML2020L8(Single) 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code DFN2020-8S
Package Size[mm] 2.0x2.0(t=0.6)
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 10.0
RDS(on)[Ω] VGS=2.5V (Typ.) 0.0133
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0094
RDS(on)[Ω] VGS=Drive (Typ.) 0.0133
Total gate charge Qg[nC] 13.0
Power Dissipation (PD)[W] 2.0
Drive Voltage[V] 2.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
    • Low on - resistance.
    • High Power Small Mold Package (HUML2020L8).
    • Pb-free lead plating; RoHS compliant
    • Halogen Free
    • 100% Rg and UIS tested
 
 
Pin Configuration:
Pin Configration
 
 
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors