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10V Drive Nch MOSFET - R6009ENXPower MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices. |
Specifications:
Grade | Standard |
Package Code | TO-220FM |
Package Size[mm] | 15.1x10.1 (t=4.6) |
Applications | Power Supply |
Number of terminal | 3 |
Polarity | Nch |
Drain-Source Voltage VDSS[V] | 600 |
Drain Current ID[A] | 9.0 |
RDS(on)[Ω] VGS=10V (Typ.) | 0.5 |
RDS(on)[Ω] VGS=Drive (Typ.) | 0.5 |
Total gate charge Qg[nC] | 23.0 |
Power Dissipation (PD)[W] | 40.0 |
Drive Voltage[V] | 10.0 |
Mounting Style | Leaded type |
Storage Temperature (Min.)[°C] | -55 |
Storage Temperature (Max.)[°C] | 150 |
Features:
- ・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant
Applications:
Pin Configuration:
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Technical Data
Reference Circuit
PFC Critical Current Mode 1P Pin=200W
Reference Circuit
PFC Critical Current Mode 2P-Interleave Pin=400W
Reference Circuit
PFC Critical Current Mode 3P-Interleave Pin=600W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 1P Pin=200W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 2P-Interleave Pin=400W
SPICE Simulation Evaluation Circuit Data
PFC Critical Current Mode 3P-Interleave Pin=600W
NE Handbook Series
For Power Device
Operation Notes
About TR Die Temperature
Operation Notes
Before using ROHM Transistor
Part Explanation
For Transistors