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PNP Low VCE(sat) Transistor + NPN Digital transistor - EMF5

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
EMF5T2R Active EMT6 8000 8000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-563
JEITA Package SC-107C
Package Size[mm] 1.6x1.6(t=0.5)
Number of terminal 6
Polarity BIP_PNP+DTR_NPN
Supply voltage VCC 1[V] 50.0
Collector current IC 1[A] 0.1
Input resistance R1 1[kΩ] 47.0
Emitter base Resistance R2 1[kΩ] 47.0
hFE 68 to
Collector-Emitter voltage VCEO1[V] -12.0
Collector current(continuous) IC1[A] -0.5
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Ultra-compact complex bipolar transistor
    · Built-In Biasing Resistors
    · For power management
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
 
 
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors