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SiC Power Module - BSM300D12P2E001

BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Constitution Materials List
BSM300D12P2E001 Active E 4 4 Tray inquiry Yes
Drain-source Voltage[V] 1200
Drain Current[A] 300.0
Total Power Dissipation[W] 1875
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
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