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SiC Power Module - BSM180D12P3C007

BSM180D12P3C007 is a half bridge module consisting of Silicon Carbide UMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
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Constitution Materials List
BSM180D12P3C007 Active C 12 12 Tray inquiry Yes
Drain-source Voltage[V] 1200
Drain Current[A] 180.0
Total Power Dissipation[W] 880
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
Pin Configuration:
Pin Configration
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