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Silicon carbide Power Module - BSM180C12P2E202 (New)

BSM180C12P2E202 is a SiC (silicon carbide) power module with low surge and low switching loss, suitable for converter, photovoltaics, wind power generation, ubdyctuib heating equipment.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM180C12P2E202 Active E 4 4 Tray Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 204.0
Total Power Dissipation[W] 1360
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
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Features:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
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New Products:
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog