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Silicon carbide Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM120D12P2C005 Active C 12 12 Tray Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 134.0
Total Power Dissipation[W] 935
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
Features:
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
 
 
Pin Configuration:
Pin Configration
 
 
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Technical Data
SPICE Simulation Evaluation Circuit Data

DC-AC Full-Bridge PS Inverter Po=15kW

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog