1200V High Voltage High & Low-side, Gate Driver - BM60210FV-C (New)

The BM60210FV-C is a monolithic high and low side gate drive IC, which can be drive high speed power MOSFET and IGBT driver with bootstrap operation. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200V. It incorporates the fault signal output functions, Under-voltage Lockout (UVLO) function and Miller clamp function.

Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
BM60210FV-CE2 Active SSOP-B20W 2000 2000 Taping inquiry Yes
Grade Automotive
Channel 2
High-side floating supply voltage [V] 1200
Turn-on/off time (Typ.) [ns] 55
Vcc(Min.)[V] 10.0
Vcc(Max.)[V] 24.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
    • Floating Channels for Bootstrap Operation to +1200V
    • Gate drive supply range from 10V to24V
    • Built-in Under Voltage Lockout for Both Channels
    • 3.3V and 5.0V Input Logic Compatible
    • Active Miller Clamping
    • AEC-Q100 Qualified
ROHM Semiconductor reserves the right to change the specifications at any time.
Technical Data
Application Note

Thermal Resistance