• Is a negative bias required for the gate drive voltage in SiC MOSFETs and modules?
    • When the drain potential increases in the FET OFF state, there is a chance that the gate potential will rise due to the effects of AC coupling of the gate-drain capacitance.
      A typical example is a bridge drive connected in series.
      In order to prevent short-circuit damage due to erroneous ON, we recommend using negative bias.
      Gate potential rise can also be mitigated by adding gate-source capacitance.
      In addition, connecting a Miller clamp MOSFET between the gate and source can prevent an increase in gate potential through reliable short-circuit operation.
      However, please note that malfunctions may occur when driving the Miller clamp MOSFET due to noise.
    • Products: SiC Power Devices , SiC MOSFET , SiC Power Module , SiC MOSFET Bare Die