US6K4
1.8V Drive Nch+Nch MOSFET
US6K4
US6K4
1.8V Drive Nch+Nch MOSFET
Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Package Code
SOT-363T
JEITA Package
SC-113DA
Number of terminal
6
Polarity
Nch+Nch
Drain-Source Voltage VDSS[V]
20
Drain Current ID[A]
1.5
RDS(on)[Ω] VGS=1.8V(Typ.)
0.22
RDS(on)[Ω] VGS=2.5V(Typ.)
0.17
RDS(on)[Ω] VGS=4.5V(Typ.)
0.13
RDS(on)[Ω] VGS=Drive (Typ.)
0.22
Total gate charge Qg[nC]
1.8
Power Dissipation (PD)[W]
1
Drive Voltage[V]
1.8
Mounting Style
Surface mount
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
150
Package Size [mm]
2x2.1 (t=0.85)
Features:
· Low voltage(1.8V) drive type· Nch+Nch Middle-power MOSFET
· Small Surface Mount Package
· Pb Free/RoHS Compliant
