SCT2280KE
1200V, 14A, THD, Silicon-carbide (SiC) MOSFET
SCT2280KE
SCT2280KE
1200V, 14A, THD, Silicon-carbide (SiC) MOSFET
This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD not co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Part Number | SCT2280KEGC11
Status |
Recommended
Package |
TO-247N
Unit Quantity | 450
Minimum Package Quantity | 30
Packing Type | Tube
RoHS |
Yes
Specifications:
Drain-source Voltage[V]
1200
Drain-source On-state Resistance(Typ.)[mΩ]
280
Generation
2nd Gen (Planar)
Drain Current[A]
14
Total Power Dissipation[W]
108
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
16x21 (t=5.2)
Features:
・ Low on-resistance・ Fast switching speed
・ Fast reverse recovery
・ Easy to parallel
・ Simple to drive
・ Pb-free lead plating ; RoHS compliant
