Our lineup of 1200V SiC MOSFETs are designed to deliver cost-effective, breakthrough performance in inverters and converters in power conditioners and other devices. Both the SCH2080KE and SCT2080KE offer dramatically lower switching loss - as much as 90% compared with silicon IGBTs - due to the absence of tail current and fast recovery characteristics of the body diode. As a result, their 70-90ns turn ON/OFF times allows for switching frequencies in the hundreds of kilohertz (kHz) range, making it possible to reduce the size and weight of passives while enabling designers to achieve higher efficiency systems by implementing simpler, less expensive cooling systems, for example by using smaller, lighter passive air-cooled heat sinks instead of liquid or forced-air thermal management.

ROHM has also succeeded in overcoming problems associated with characteristics deterioration due to body diode degradation during reverse conduction (i.e. increased ON resistance, forward voltage, and resistance deterioration) and premature failure of the gate oxide film by improving processes related to crystal defects and device structure, reducing ON resistance per unit area by about 30% over conventional products.

In addition, the popular SCH2080KE is the industry's first SiC MOSFET to co-package a discrete anti-parallel SiC Schottky barrier diode, with a forward voltage three times smaller than that of the body diode. This minimizes power loss (by 70% or more) while saving valuable board space, simplifying layout, and reducing BOM costs compared to equivalent discrete solutions.

The combination of excellent switching performance, low ON resistance, and high breakdown voltage make these SiC MOSFETs ideal replacements for silicon power MOSFETs and IGBTs in a wide range of applications, including solar and 3-phase inverters, DC/DC converters, uninterruptible power supplies (UPS), and motor drives.

Key Advantages

No tail current reduces switching loss

Unlike silicon devices, SiC power MOSFETs feature no tail current, reducing turn OFF loss by over 90%. This makes it possible to increase switching frequency, enabling compatibility with smaller, lighter components.

Turn OFF Characteristics Turn OFF Characteristics

VDS-ID characteristics comparison

Innovations related to gate oxidizing conditions enable an ON resistance per-unit-area 29% lower than conventional products, resulting in the lowest ON resistance in the 1200V TO-247 MOSFET class*. In addition, low ON resistance is maintained even at high temperatures, while no voltage rise ensures low loss even during light loads.

VDS-ID characteristics comparison

Application Circuit Examples

Application Circuit Examples


  • DC/DC converters
  • Solar power inverters
  • 3-phase inverters
  • Power conditioners
  • Uninterruptible power supplies (UPS)
  • Inverters for EVs and HEVs
  • Inverters for AC
  • Industrial equipment
SiC-MOSFET co-packaged with an SiC-SBD

SCH2080KE integrates both an SiC MOSFET and SiC SBD for low VF, reducing power loss by more than 70%. In addition, fewer parts are required, minimizing board space, simplifying layout, and decreases BOM costs.

SiC MOSFET co-packaged with an SiC-SBD


Part No. BVDSS RDS(on) Package
1200V 80mΩ TO-247
1200V 80mΩ TO-247
1200V 160mΩ TO-247
1200V 280mΩ TO-247
1200V 450mΩ TO-247
Package TO-247 External Dimensions


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