SiC Support
Formula E

SiC MOSFET

SiC features lower switching loss and superior electrical characteristics in the high temperature range than conventional Si semiconductor elements.

Electronics Fundamentals
SiC MOSFET Features

Features

  • Significantly reduced power loss by 73%
    (Compared to Si-IGBTs, when operating at 30kHz)
  • Contributes to greater miniaturization
  • Minimal reverse recovery behavior of the parasitic diode
Rated Voltage ON-Resistance
650V 120mΩ
1200V 80mΩ~450mΩ
1700V 1150mΩ

TO-247 TO-220AB TO3PFMComparison of Loss Features Reverse recovery characteristics of body diode

Characteristics of 3rd Generation SiC Trench MOSFETs

ON resistance reduced by 50%*
over planar-type SiC MOSFETs and
switching performance is improved
(approx. 35% lower input capacitance).
*Comparison of the same-size chip

Lineup

Rated Voltage ON-Resistance
650V 17mΩ~120mΩ
1200V 22mΩ~160mΩ
Characteristics of 3rd Generation SiC Trench MOSFETs

Application Circuit Example

Application Circuit Example

Applications

600V rated voltage allows operation at over 1000V

  • Industrial equipment
  • Air conditioner inverters
  • Inverters for solar power generation
  • Inverters for Electric Vehicles (EV)
Applications

SiC MOSFET
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