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Nch 30V 10A Small Signal MOSFET - RQ1E100XN

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RQ1E100XNTR Active TSMT8 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code TSMT8
Package Size[mm] 3.0x2.8(t=0.8)
Applications Switching
Number of terminal 8
Polarity Nch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 10.0
RDS(on)[Ω] VGS=4V (Typ.) 0.01
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0095
RDS(on)[Ω] VGS=10V (Typ.) 0.0075
RDS(on)[Ω] VGS=Drive (Typ.) 0.01
Total gate charge Qg[nC] 12.7
Power Dissipation (PD)[W] 1.5
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · 4V-drive type
    · Nch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors