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650V 4A Field Stop Trench IGBT - RGT8NS65D(LPDS)

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RGT8NS65DGTL Active LPDS 1000 1000 Taping Yes
 
Specifications:
Series T: For inverter (tsc 5µs)
VCES [V] 650
IC(100°C)[A] 4
VCE(sat) (Typ.) [V] 1.65
tf(Typ.) [ns] 71
tsc(Min.) [us] 5
Built-in Diode FRD
Pd [W] 65
BVCES (Min.)[V] 650
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • 1) Low Collector - Emitter Saturation Voltage
    2) Low Switching Loss
    3) Short Circuit Withstand Time 5us
    4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
    5) Pb - free Lead Plating ; RoHS Compliant
 
 
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Technical Data
Condition Of Soldering

For Surface Mount Type

Operation Notes

For Surface Mount Type

Operation Notes

For Lead Type