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Nch 40V 60A Power MOSFET - RD3G600GN (New)

RD3G600GN is a power MOSFET with low-on resistance and High power package (TO-252), suitable for switching.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
RD3G600GNTL Active TO-252 2500 2500 Taping Yes
 
Specifications:
Grade Standard
Number of terminal 3
Polarity Nch
Drain-Source Voltage VDSS[V] 40
Drain Current ID[A] 60.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.0033
RDS(on)[Ω] VGS=10V (Typ.) 0.0028
RDS(on)[Ω] VGS=Drive (Typ.) 0.0033
Total gate charge Qg[nC] 23.5
Power Dissipation (PD)[W] 40.0
Drive Voltage[V] 4.5
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
    • Low on - resistance
    • High power package (TO-252)
    • Pb-free lead plating ; RoHS compliant
    • Halogen free
 
 
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ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
NE Handbook Series

For Power Device

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Part Explanation

For Transistors