10V Drive Nch MOSFET - R6009ENJ

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.

Part Number	Status	Package	Unit Quantity	Minimum Package Quantity	Packing Type	RoHS
R6009ENJTL	Active	LPTS(D2PAK)	1000	1000	Taping	Yes

Specifications:

Grade	Standard
Package Code	TO-263(D2PAK)
JEITA Package	SC-83
Package Size[mm]	10.1x13.1(t=4.5)
Applications	Power Supply
Number of terminal	3
Polarity	Nch
Drain-Source Voltage VDSS[V]	600
Drain Current ID[A]	9.0
RDS(on)[Ω] VGS=10V (Typ.)	0.5
RDS(on)[Ω] VGS=Drive (Typ.)	0.5
Total gate charge Qg[nC]	23.0
Power Dissipation (PD)[W]	40.0
Drive Voltage[V]	10.0
Mounting Style	Surface mount
Storage Temperature (Min.)[°C]	-55
Storage Temperature (Max.)[°C]	150

Features:

・ Low on-resistance.
・ Fast switching speed.
・ Gate-source voltage (VGSS) guaranteed to be ±20V.
・ Drive circuits can be simple.
・ Parallel use is easy.
・ Pb-free lead plating ; RoHS compliant

Applications:

Pin Configuration:

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