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1.2V Drive Pch+Pch MOSFET - EM6J1

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
EM6J1T2R Active EMT6 8000 8000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-563
JEITA Package SC-107C
Package Size[mm] 1.6x1.6(t=0.5)
Number of terminal 6
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -0.2
RDS(on)[Ω] VGS=1.2V (Typ.) 2.4
RDS(on)[Ω] VGS=1.5V (Typ.) 1.6
RDS(on)[Ω] VGS=2.5V (Typ.) 1.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.8
RDS(on)[Ω] VGS=Drive (Typ.) 2.4
Total gate charge Qg[nC] 1.4
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] -1.2
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Low voltage(1.2V) drive type
    · Pch+Pch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Technical Data
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Storage Conditions

For Transistors

Condition Of Soldering

For Surface Mount Type

Part Explanation

For Transistors