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Silicon carbide Power Module - BSM300D12P2E001

BSM300D12P2E001 is a half bridge module consisting of Silicon Carbide DMOSFET and Silicon Carbide Schottky Barrier Diode.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
BSM300D12P2E001 Active E 4 4 Tray Yes
 
Specifications:
Common Standard -
Drain-source Voltage[V] 1200
Drain Current[A] 300.0
Total Power Dissipation[W] 1875
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Package Half bridge
Features:
    • Low surge, low switching loss.
    • High-speed switching possible.
    • Reduced temperature dependance.
 
 
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Technical Data
SPICE Simulation Evaluation Circuit Data

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SPICE Simulation Evaluation Circuit Data

DC-DC Half-Bridge CCCV Charger Po=50kW (for Thermal evaluation)

SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

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