BSM300C12P3E201

1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET
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BSM300C12P3E201

BSM300C12P3E201
1200V, 300A, Boost Chopper, Full SiC-Power Module with Trench MOSFET

BSM300C12P3E201 is a SiC (silicon carbide) power module with Low surge and low switching loss, suitable for motor drive, converter, photovoltaics, wind power generation.

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* This is a standard-grade product.
For Automotive usage, please contact Sales.
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Product Detail

 
Part Number | BSM300C12P3E201
Status | Recommended
Package | E
Unit Quantity | 4
Minimum Package Quantity | 4
Packing Type | Corrugated Cardboard
RoHS | Yes

Specifications:

Drain-source Voltage[V]

1200

Drain Current[A]

300

Total Power Dissipation[W]

1360

Junction Temperature(Max.)[°C]

175

Storage Temperature (Min.)[°C]

-40

Storage Temperature (Max.)[°C]

125

Package

Chopper

Package Size [mm]

152x57.95 (t=18)

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Features:

  • Low surge, low switching loss.
  • High-speed switching possible.
  • Reduced temperature dependance.

Reference Design / Application Evaluation Kit

 
    • Drive Board - BSMGD3G12D24-EVK001

    • This evaluation board, BSMGD3G12D24-EVK001, is a gate driver board for full SiC Modules with the 3rd / 4th Generation SiC-MOSFET in G and E type housing. This evaluation board contains all the necessary components for optimal and safety driving the SiC module.

    • User Guide
    • Snubber Module - MGSM1D72J2-145MH16

    • Snubber Module for BSM series (1200V, E / G type)

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