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SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

Part Number Status Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS
BSM120D12P2C005 Active C 12 12 Tray inquiry Yes
Drain-source Voltage[V] 1200
Drain Current[A] 120
Total Power Dissipation[W] 780
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
  • N/A
Pin Configuration:
Pin Configration
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

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