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SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

FAQ 
Part Number Status Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS
BSM120D12P2C005 Available C 12 12 Tray inquiry Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain Current[A] 120
Total Power Dissipation[W] 780
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
Features:
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
 
 
Applications:
  • N/A
Pin Configuration:
Pin Configration
 
 
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog