Home SiC Power Devices SiC Power Module BSM120D12P2C005
Downloading...

SiC Power Module - BSM120D12P2C005

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

Part Number Status Datasheet Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS Distribution Inventory
BSM120D12P2C005 Active Datasheet C 36 0 Tray inquiry Yes Buy Sample
Technical Data
NE Handbook Series

 For Power Device

Application Note

 For SiC Power Devices and Modules

Product Catalog File

 SiC Power Device Catelog

Specifications:   Features:   Pin Configuration:
Drain-source Voltage[V] 1200
Drain Current[A] 120
Total Power Dissipation[W] 780
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
Pin Configration
Applications: Supporting Links:
  • N/A
Recent Clicks:
Visited Product(s) Sales
Other New/Updated Products Relating to SiC Power Devices
1. Discrete Semiconductors - SiC Power Devices - SiC Power Module - SiC Power Module Datasheet