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SiC Power Module - BSM120D12P2C005 (New *)

Half bridge module consisting of ROHM SiC-DMOSFETs and SiC-SBDs.

SiC Special Contents

Part Number Status Datasheet Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS Distribution Inventory
BSM120D12P2C005 Active Datasheet C 36 0 Tray inquiry Yes Buy Sample
Technical Data
Application Note

 For SiC Power Devices and Modules

NE Handbook Series

 For Power Device

Product Catalog File

 SiC Power Device Catelog

Part Explanation


Part Explanation

 For SiC Schottky Barrier Diodes

Specifications:   Features:   Pin Configuration:
Drain-source Voltage[V] 1200
Drain Current[A] 120
Total Power Dissipation[W] 780
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -40
Storage Temperature (Max.)[°C] 125
  • ・Full SiC power module with SiC MOSFET and SiC SBD
    ・High-speed switching and low switching loss
    ・Ensured reliability of body diode conduction
Pin Configration
Applications: Supporting Links:
  • N/A
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* ROHM Semiconductor reserves the right to change the specifications at any time.