600V High Voltage 3 Phase Bridge Driver - BS2130F-G

The BS2130F is a monolithic bridge driver IC, which can drive N-channel power MOSFET and IGBT driver in 3 phase systems with bootstrap operations. The floating channel can be used to driven an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600V. The logic inputs can be used 3.3V and 5.0V. To provide a protection circuit, the device Includes an Under Voltage Lockout (UVLO) circuit and an Over Current Protection (OCP) circuit. The UVLO circuit prevents malfunction when VCC and VBS are lower than the specified threshold voltage.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part Number
Unit Quantity
Minimum Package Quantity
Packing Type
BS2130F-GE2 Active SOP-28 1500 1500 Taping Yes
Grade Standard
Channel 6
High-side floating supply voltage [V] 600
Min Output Current Io+ [mA] 200
Min Output Current Io- [mA] 350
Turn-on/off time (Typ.) [ns] 630/580
Dead time (Typ.) [ns] 300
Offset supply leakage current (Max.) [µA] 50
Vcc(Min.)[V] 11.5
Vcc(Max.)[V] 20.0
Operating Temperature (Min.)[°C] -40
Operating Temperature (Max.)[°C] 125
    • Floating Channels for Bootstrap Operation to +600V
    • Gate drive supply range from 11.5V to 20V
    • Built-in Under Voltage Lockout for Both Channels
    • The device includes an Over Current Protection circuit
    • Built-in Enable Channel (EN) which enable I/O functionality
    • Built-in FAULT Channel (/FAULT) which indicates over current and under voltage
    • RCIN Channel can determine the OCP holding time by external resistance and capacitance
    • 3.3V and 5.0V input logic compatible
    • Output in phase with input
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Technical Data
BS2130F-G Application Note

Application for driving N-channel MOSFET and IGBT

Thermal Resistance

The definition and how to use thermal resistance and thermal characterization parameter of packages for ROHM’s integrated circuit are described in this application note.