BSM180D12P3C007 1200V/180A Full SiC Power Module product information release

1200V/180A Full SiC Power Module with Integrated SiC Trench MOSFET

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SiC devices are attracting attention due to their superior performance and characteristics compared with silicon as a semiconductor material.
ROHM's new SiC MOSFET, which utilizes a trench structure that reduces ON resistance by 50% and input capacitance by 35% compared with existing planar-type SiC MOSFETs, has been adopted in ROHM's 1200V/180A full SiC power module.


Standard Single Trench Structure / ROHM's Double Trench Structure

・Proprietary double trench structure provides long-term reliability

Trench-type SiC MOSFETs are garnering increased attention due to their lower ON resistance. However, to ensure long-term reliability essential for commercialization it is necessary to mitigate electric field concentration at the trench gate. In response, ROHM utilized a proprietary double trench structure that minimizes electric field concentration, making it possible to quickly develop and produce SiC trench MOSFETs.


・Lower ON resistance

ROHM's unique design reduces ON resistance by 50% in the same chip size compared with conventional planar SiC MOSFETs and improves switching performance (35% lower input capacitance), contributing to greater system efficiency.

ON Resistance vs. Input Capacitance
Switching Loss Comparison


Part No. Absolute Max. Ratings RDS(ON)
Tj(℃) Tstg
(AC 1min.)
BSM180D12P3C007 1200 -4~22 180 -40 to +175 -40 to +125 2500 10 C type
Package / Internal Circuit

Related Information

■ Product Information

SiC Power Device Lineup

In addition to 1200V/180A full SiC power modules with built-in trench MOSFET, ROHM will continue to expand its market-leading product lineups and develop solutions that meet market by leveraging the latest proprietary technologies.

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