IGBTROHM's IGBT, Insulated Gate Bipolar Transistor, contributes to achieve higher efficiency and energy saving for wide range of high voltage and high current applications.
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Field Stop Trench IGBT (58)
ROHM's products are realized low Vce(sat) and Low switching loss by ROHM's trench gate and thin wafer technology.
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Ignition IGBT (5)
ROHM's ignition IGBTs for Automotive are High reliability product which achieved both low Vce(sat) and high avalanche energy.
