SiC Support
Formula E

Full SiC Power Modules

Overview | Key Features | Circuit diagram | lineup | Evaluation boards | Applications |

Electronics Fundamentals
SiC Power Module Features

Overview

Full-SiC power module integrating SiC MOSFETs and SBDs*1.
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products). In addition,high-speed switching, combined with low-loss performance, make them ideal as replacements for 200-400A Si IGBTs.

Full SiC Power Module

Key Features: Switching loss reduced by more than 80%

Full SiC power modules maximize high-speed performance. The result is significantly reduced switching loss compared with conventional Si IGBTs.

Features

  • High-speed switching
  • Low switching loss
  • High-speed recovery
  • Low inductance design

Enables Low Loss Even During High-Speed Switching Operation Enables Low Loss Even During High-Speed Switching Operation

Circuit diagram

Circuit diagram

Lineup

MAXIMUM RATING (Tj=25ºC)

Part No. Absolute Maximum Ratings(Ta=25°C) RDS
(ON)
(mΩ)
Paclage Thermistor Internal Circuit Diagram
VDS
(V)
ID
(A)
(Tc=
60°C)
Tj
(°C)
Tstg
(°C)
Visol
(V)
(AC
1min.)
NEW
BSM080D12P2C008
(2G. DMOS)
1200 80 -40 to
+175
-40 to
+125
2500 34 C
type
- Internal Circuit Diagram(BSM120D12P2C005)
BSM120D12P2C005
(2G. DMOS)
120 -40 to
+150
20 Internal Circuit Diagram(BSM120D12P2C005)
NEW
BSM180D12P3C007
(3G.UMOS -Trench Gate)
180 -40 to
+175
10 Internal Circuit Diagram(BSM120D12P2C005)
NEW
BSM300D12P2E001
(2G. DMOS)
300 -40 to
+175
7.3 E
type
Internal Circuit Diagram(BSM300D12P2E001)

■External Dimensions
External Dimensions

Evaluation boards

Gate drive circuit boards to drive Full SiC Power modules are available for evaluation purpose.
Feature:

  • Built in miller clamp function
  • Compatible with gate bias of both 0V to +18V and -3V to +18V.
    (Removal and replacement of several components are required.)

 

P/N BW9499H
-EVK-01
BW9499H
-EVK-02
BW9499H
-EVK-03
BP59A8H
-EVK-01
BP59A8H
-EVK-02
SiC Module BSM180D12P3C007 BSM080D12P2C008
BSM120D12P2C005
BSM300D12P2E001
PKG PKG
Appearance Board Board
Gate Drive IC BM6101FV-C
RG ON 6.8Ω 2.2Ω 0.01Ω
RG OFF 8.2Ω 3.9Ω 0.2Ω
CGS - 5.6nF 5.6nF
Gate Turn Off Minus Zero Minus Zero Minus
Recommended VGS +18V / -2V +18V / 0V +18V / -3V +18V / 0V +18V / -3V

Please contact us if you need further information

Applications

  • High voltage motor drives
  • Inverters, Converters for Industrial equipment, e-mobilities (EV, HEV, train, e-bike etc.).
  • Solar/wind power generation, power supply unit, induction heating equipment
And more
Applications

Future developments
Our lineup has been expanded to include a new model that achieves higher rated current through the use of an SiC device that adopts a trench structure and a high voltage module.

Full SiC Power Module