| Full-SiC power module integrating SiC MOSFETs and SBDs*1. |
An original electric field mitigation structure, along with a novel screening method, are utilized to maintain reliability and enable the development of the first mass production system for Full-SiC power modules. These new modules integrate SiC SBDs and MOSFETs, making high frequency operation above 100kHz possible (unlike conventional products). In addition,high-speed switching, combined with low-loss performance, make them ideal as replacements for 200-400A Si IGBTs.
*1：Note: Custom products will be produced at the end of March, with mass production of general-purpose products beginning in June
Replacing Si IGBTs with SiC MOSFETs result in the industry's first mass production of "Full SiC" power modules. ROHM produces both SiC SBDs and SiC MOSFETs in-house, ensuring unparalleled reliability.
Switching loss is significantly lower than conventional IGBT modules,
■Absolute Maximum Ratings
MAXIMUM RATING (Tj=25ºC)
|Gate-Source Voltage||VGS||-6 to ＋22||V|
|Continuous Drain Current *1||IDS||120(TC=60ºC)||A|
|Repetitive peak drain curren *1||IDRM||240(Tc = 60ºC,Pw=1msec *2 )||A|
|Continuous Source Current *1||ISD||120(TC=60ºC)||A|
|Repetitive peak source current *1||ＩSRM||240(Tc = 60ºC,Pw=1msec *2 )||A|
|Junction temperature||Tjop||-40 to 150||ºC|
|Range of storage temperature||Tstg||-40 to 125||ºC|
|Insulation test voltage||Visol||2500(RMS,f=60Hz,t=1min) *3||Vrms|
|Mounting torque||-||4.5(screw M6)||Nm|
|Terminal connection torque||-||3.5(screw M5)||Nm|
*1:The Tc measurement point is just under the chip.
*2: Tj < 150ºC
*3: Measurement conducted based on UL1557.
The specifications are subject to change without notice
| 2nd generation SiC MOSFETs are utilized, reducing ON-resistanceby 29% compared with 1st generation models. |
Industrial equipment, EVs/HVs, solar power, and more