ROHM SiC-MOSFET

SiC features lower switching loss and superior electrical characteristics in the high temperature range than conventional Si semiconductor elements.

Electronics Fundamentals
SiC MOSFET Features

Features

  • Significantly reduced power loss by 73%
    (Compared to Si-IGBTs, when operating at 30kHz)
  • Contributes to greater miniaturization
  • Minimal reverse recovery behavior of the parasitic diode
Rated Voltage ON-Resistance
650V 120mΩ
1200V 45mΩ~450mΩ
1700V* 100mΩ~1150mΩ
Comparison of Loss Turn OFF, ON-Resistance Temperature Characteristics Reverse recovery characteristics of body diode

Characteristics of 3rd Generation SiC Trench MOSFETs

MOSFET第2世代・第3世代比較

Compared to 2nd generation SiC-MOSFET,

  • ON resistance reduced by 50%*
  • Approx. 35% lower input capacitance (Ciss)
Lineup
Rated Voltage ON-Resistance
650V 30mΩ
1200V 22mΩ*~40mΩ

Circuit Example

Circuit Example

Applications

600V rated voltage allows operation at over 1000V

  • Industrial equipment
  • Air conditioner inverters
  • Inverters for solar power generation
  • Inverters for Electric Vehicles (EV)
application
SiC MOSFET
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