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Key Features
  • Spice Simulation Evaluation Circuit is available. Download Circuit Data
  • Input: Vin=400V
  • Output: Po=10kW
    Vph_ph=320Vpk (Vin*MR)
    Im=25.5A (Po/Vin/MR/√1.5)
  • PWM: fsw=20kHz (3-Phase Modulation)
    rpm=3000
    MR=0.8 (Vph_ph(pk)/Vin)
    td1=100ns
    td2=100ns
  • Gate Drive: Vd=10V Vs=-2V
    R source1=5Ω
    R sink1=2Ω
    R source2=5Ω
    R sink2=2Ω
  • Q1,2,3,4,5,6: R6047MNZ1 (600V 47A)
    Si MOSFET
    Fast Reverse Recovery
  • L1,2,3: 1mH
  • R1,2,3: {Po/Im/Im/3}
  • R4: {(Im-1)*10k}
  • R5: 10kΩ
  • Tj=100℃
Used Products
Last update:2016/11/08
 
 
Key Features
  • Spice Simulation Evaluation Circuit is available. Download Circuit Data
  • Input: Vin=400V
  • Output: Po=10kW
    Vph_ph=320Vpk (Vin*MR)
    Im=25.5A (Po/Vin/MR/√1.5)
  • PWM: fsw=20kHz (2-Phase Modulation)
    rpm=3000
    MR=0.8 (Vph_ph(pk)/Vin)
    td1=100ns
    td2=100ns
  • Gate Drive: Vd=10V Vs=-2V
    R source1=5Ω
    R sink1=2Ω
    R source2=5Ω
    R sink2=2Ω
  • Q1,2,3,4,5,6: R6047MNZ1 (600V 47A)
    Si MOSFET
    Fast Reverse Recovery
  • L1,2,3: 1mH
  • R1,2,3: {Po/Im/Im/3}
  • R4: {(Im-1)*10k}
  • R5: 10kΩ
  • Tj=100℃
Used Products
Last update:2016/11/08
 
 
Key Features
  • Spice Simulation Evaluation Circuit is available. Download Circuit Data
  • Input: Vin=400V
  • Output: Vo=12V Io=100A
  • PWM: fsw=200kHz
  • Gate Drive: Vd=10V/Vs=-2V
    td1=100ns
    td2=100ns
    Rg source1=5Ω
    Rg sink1=2Ω
    Rg source2=5Ω
    Rg sink2=2Ω
  • Q1,2,3,4: R6011ENX
    Si MOSFET (600V 11A)
  • D1,2,3,4,5,6: RB238T100
    Si SBD (100V 20A+20A)
  • TX1: 500uH : 0.8uH+0.8uH K=1
  • L1: 5uH
  • L2: 5uH
  • Tj: 100℃
Used Products
Last update:2016/11/07
 
 
Key Features
  • Spice Simulation Evaluation Circuit is available. Download Circuit Data
  • Input: Vin=400V
  • Output: Vo=12V Io=100A
  • PFM: fsw=50kHz~100kHz
  • Gate Drive: Vd=10V/Vs=-2V
    td1=100ns
    td2=100ns
    Rg source1=5Ω
    Rg sink1=2Ω
    Rg source2=5Ω
    Rg sink2=2Ω
  • Q1,2: R6020ENX
    Si MOSFET (600V 20A)
  • D1,2,3,4: RB238T-40
    Si SBD (40V 20A+20A)
  • TX1: 500uH : 5uH+5uH K=1
  • L1: 100uH
  • C1: 100nF
  • Tj: 100℃
Used Products
Last update:2016/11/07
 
 
Key Features
  • Spice Simulation Evaluation Circuit is available. Download Circuit Data
  • Input: Vin=400V
  • Output: Vo=12V Io=100A
  • PWM: fsw=200kHz
  • Gate Drive: Vd=10V/Vs=-2V
    td1=100ns
    td2=100ns
    Rg source1=5Ω
    Rg sink1=2Ω
    Rg source2=5Ω
    Rg sink2=2Ω
  • Q1,2,3,4: R6011ENX
    Si MOSFET (600V 11A)
  • D1,2,3,4,5,6: RB238T100
    Si SBD (100V 20A+20A)
  • TX1: 500uH : 0.8uH+0.8uH K=1
  • L1: 5uH
  • L2: 5uH
  • Tj: 100℃
Used Products
Last update:2016/11/07
 
 

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