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4V Drive Nch + 2.5V Drive Pch MOSFET - US6M1

Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
US6M1TR Active TUMT6 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-363T
JEITA Package SC-113DA
Package Size[mm] 2.0x2.1(t=0.85max.)
Number of terminal 6
Polarity Nch+Pch
Drain-Source Voltage VDSS[V] 30
Drain Current ID[A] 1.4
RDS(on)[Ω] VGS=4V (Typ.) 0.27
RDS(on)[Ω] VGS=10V (Typ.) 0.17
RDS(on)[Ω] VGS=Drive (Typ.) 0.27
Total gate charge Qg[nC] 1.4
Power Dissipation (PD)[W] 1.0
Drive Voltage[V] 4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · Nch+Pch Middle-power MOSFET
    · Fast Switching Speed
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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Technical Data
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Part Explanation

For Transistors