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4V Drive Pch+Pch MOSFET - UM6J1N

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
UM6J1NTN Active UMT6 3000 3000 Taping Yes
 
Specifications:
Grade Standard
Package Code SOT-363
JEITA Package SC-88
Package Size[mm] 2.0x2.1(t=0.9)
Number of terminal 6
Polarity Pch+Pch
Drain-Source Voltage VDSS[V] -30
Drain Current ID[A] -0.2
RDS(on)[Ω] VGS=4V (Typ.) 1.6
RDS(on)[Ω] VGS=4.5V (Typ.) 1.4
RDS(on)[Ω] VGS=10V (Typ.) 0.9
RDS(on)[Ω] VGS=Drive (Typ.) 1.6
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] -4.0
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
Features:
  • · 4V-drive type
    · Pch+Pch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
 
 
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New Products:
 
 
Technical Data
NE Handbook Series

For Power Device

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors