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N-channel Silicon Carbide Power MOSFET - SCT2H12NY (New)

1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCT2H12NYTB Active TO-268-2L 800 800 Taping Yes
 
Specifications:
Drain-source Voltage[V] 1700
Drain-source On-state Resistance(Typ.)[mΩ] 1150
Drain Current[A] 4.0
Total Power Dissipation[W] 44
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low on-resistance
    • Fast switching speed
    • Long creepage distance with no center lead
    • Simple to drive
    • Pb-free lead plating; RoHS compliant
 
 
 
ROHM Semiconductor reserves the right to change the specifications at any time.
 
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET