SCT2H12NY
1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET
SCT2H12NY
SCT2H12NY
1700V, 4A, SMD, Silicon-carbide (SiC) MOSFET
1700V 4A N-channel SiC (Silicon Carbide) power MOSFET.
Data Sheet
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* This is a standard-grade product.
For Automotive usage, please contact Sales.
For Automotive usage, please contact Sales.
Product Detail
Specifications:
Drain-source Voltage[V]
1700
Drain-source On-state Resistance(Typ.)[mΩ]
1150
Generation
2nd Gen (Planar)
Drain Current[A]
4
Total Power Dissipation[W]
44
Junction Temperature(Max.)[°C]
175
Storage Temperature (Min.)[°C]
-55
Storage Temperature (Max.)[°C]
175
Package Size [mm]
15.95x18.9 (t=5.2)
Features:
- Low on-resistance
- Fast switching speed
- Long creepage distance with no center lead
- Simple to drive
- Pb-free lead plating; RoHS compliant