Downloading...

N-channel Silicon Carbide Power MOSFET - SCT2750NY

1700V 6A N-channel SiC (Silicon Carbide) power MOSFET.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCT2750NYTB Active TO-268-2L 800 800 Taping Yes
 
Specifications:
Common Standard -
Drain-source Voltage[V] 1700
Drain-source On-state Resistance(Typ.)[mΩ] 750
Drain Current[A] 6.0
Total Power Dissipation[W] 57
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • Low on-resistance
    • Fast switching speed
    • Long creepage distance with no center lead
    • Simple to drive
    • Pb-free lead plating; RoHS compliant
 
 
RELATED PRODUCTS
Other New/Updated Products Relating to SiC Power Devices
PART NUMBER Product Name Package Datasheet Distribution Inventory
SCT3080AL N-channel Silicon Carbide Power MOSFET TO-247N   Buy Sample
SCT2H12NY N-channel Silicon Carbide Power MOSFET TO-268-2L   Buy Sample
SCT3017AL N-channel Silicon Carbide Power MOSFET TO-247N   inquiry
SCT3022AL N-channel Silicon Carbide Power MOSFET TO-247N   Buy Sample
SCT3022KL N-channel Silicon Carbide Power MOSFET TO-247N   Buy Sample
SCT3030KL N-channel Silicon Carbide Power MOSFET TO-247N   Buy Sample
New Products:
 
 
Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET