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Silicon carbide Schottky Barrier Diode for Automotive - SCS220KE2HR

Switching loss reduced, enabling high-speed switching . (2-pin package)

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Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCS220KE2HRC Active TO-247 360 30 Tube Yes
 
Specifications:
Grade Automotive
Common Standard AEC-Q101
Reverse Voltage[V] 1200
Continuous Forward Current[A] 20
Total Power Dissipation[W] 280
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
    • AEC-Q101 qualified
    • Shorter recovery time
    • High-speed switching possible
    • Reduced temperature dependence
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes