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SiC Schottky Barrier Diode - SCS215AE

Switching loss reduced, enabling high-speed switching . (2-pin package)

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Status
Package
Unit Quantity
Minimum Package Quantity
Packing Type
RoHS
SCS215AEC Active TO-247 360 30 Bulk Yes
 
Specifications:
Grade Standard
Common Standard -
Reverse Voltage[V] 650
Continuous Forward Current[A] 15
Total Power Dissipation[W] 110
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • ・Shorter recovery time
    ・Reduced temperature dependence
    ・High-speed switching possible
 
 
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Technical Data
SPICE Simulation Evaluation Circuit

Circuit data for device evaluation

For SiC Power Devices and Modules

SiC (Silicon Carbide) is a compound semiconductor comprised of silicon (Si) and carbon (C). Compared to Si...

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC Schottky Barrier Diodes