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SiC MOSFET - SCH2080KE

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

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Part number Status Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS
SCH2080KEC Active TO-247 360 30 Tube inquiry Yes
 
Specifications:
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 40
Total Power Dissipation[W] 262
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
Features:
  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
 
 
Applications:
  • N/A
Pin Configuration:
Pin Configration
 
 
 
 
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Part Explanation

For SiC MOSFET

NE Handbook Series

For Power Device

Application Note

For SiC Power Devices and Modules

Product Catalog File

SiC Power Device Catelog