Home SiC Power Devices SiC MOSFET SCH2080KE


This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.

Part number Status Datasheet Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS Distribution Inventory
SCH2080KEC Active Datasheet TO-247 360 30 Tube inquiry Yes Buy Sample
Technical Data
Part Explanation


NE Handbook Series

 For Power Device

Application Note

 For SiC Power Devices and Modules

Product Catalog File

 SiC Power Device Catelog

Specifications:   Features:   Pin Configuration:
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 40
Total Power Dissipation[W] 262
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
Pin Configration
Applications: Supporting Links:
  • N/A
Recent Clicks:
Visited Product(s) Sales
Other New/Updated Products Relating to SiC Power Devices
1. Discrete Semiconductors - SiC Power Devices - SiC Power Module - SiC Power Module Datasheet