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SiC MOSFET - SCH2080KE (New *)

This is an SiC (Silicon Carbide) planar MOSFET. (SiC-SBD co-packed) Features include high voltage resistance, low ON resistance, and fast switching speed.
Application Note for SiC Power Devices is hereDatasheet

Part number Status Datasheet Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS Distribution Inventory
SCH2080KEC Active Datasheet TO247 360 Tube - Yes Buy or Sample
Specifications:   Features:   Pin Configuration:
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mΩ] 80
Drain Current[A] 35
Total Power Dissipation[W] 179
Junction Temperature(Max.)[°C] 150
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
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  • ・High-speed switching
    ・Low ON resistance
    ・Low body diode Qrr and trr
    ・Ensured reliability of body diode conduction
    ・SiC SBD co-packed
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 Pin Configration
Applications: Supporting Links:
  • N/A
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* ROHM Semiconductor reserves the right to change the specifications at any time.