N-channel SiC power MOSFET Bare Die - S4101 (New)

S4101 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
S4101 Active inquiry Yes
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 40
Drain Current[A] 55.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • · Low ON resistance
    · Fast switching speed
    · Fast revese recovery
    · Easy to parallel
    · Simple to drive
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Technical Data
Application Note

For SiC Power Devices and Modules

NE Handbook Series

For Power Device

Product Catalog File

SiC Power Device Catelog

Part Explanation

For SiC MOSFET Bare Die