N-channel SiC power MOSFET Bare Die - S2308

S2308 is an SiC (Silicon Carbide) planar MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.
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* This product is a STANDARD grade product and not recommend for on-vehicle devices.
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Unit Quantity
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Constitution Materials List
S2308 Active inquiry Yes
Drain-source Voltage[V] 1200
Drain-source On-state Resistance(Typ.)[mO] 280
Drain Current[A] 14.0
Junction Temperature(Max.)[°C] 175
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 175
  • · Low ON resistance
    · Fast switching speed
    · Fast revese recovery
    · Easy to parallel
    · Simple to drive
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