4V Drive Pch MOSFET - RU1C002ZP

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.

* This product is a STANDARD grade product and not recommend for on-vehicle devices.
Part number
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RU1C002ZPTCL Active UMT3F 3000 3000 Taping inquiry Yes
Grade Standard
Package Code SOT-323FL
JEITA Package SC-85
Package Size[mm] 2.0x2.1(t=0.9)
Number of terminal 3
Polarity Pch
Drain-Source Voltage VDSS[V] -20
Drain Current ID[A] -0.2
RDS(on)[Ω] VGS=1.2V (Typ.) 2.4
RDS(on)[Ω] VGS=1.5V (Typ.) 1.6
RDS(on)[Ω] VGS=2.5V (Typ.) 1.0
RDS(on)[Ω] VGS=4.5V (Typ.) 0.8
RDS(on)[Ω] VGS=Drive (Typ.) 2.4
Total gate charge Qg[nC] 1.4
Power Dissipation (PD)[W] 0.15
Drive Voltage[V] -1.2
Mounting Style Surface mount
Storage Temperature (Min.)[°C] -55
Storage Temperature (Max.)[°C] 150
  • · Low voltage(1.2V) drive type
    · Pch Small-signal MOSFET
    · Small Surface Mount Package
    · Pb Free/RoHS Compliant
Technical Data
NE Handbook Series

For Power Device

Taping Specifications

For Transistors

Condition Of Soldering

For Surface Mount Type

Storage Conditions

For Transistors

Operation Notes

About TR Die Temperature

Operation Notes

Before using ROHM Transistor

Part Explanation

For Transistors